Standard No.:	GB/T 26068-2010
Chinese Name:	硅片载流子复合寿命的无接触微波反射光电导衰减测试方法
English Name:	Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Professional Classification:	H80 Semimetal and semiconductor material in general
ICS Classification:	29.045 Semiconducting materials
Issued by:
Issued on:	2011-01-10
Implemented on:	2011-10-01
Status:	ABOLISHED
Replace By:	GB/T26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
Replace By Date:	2019-11-01
Language:	English
File Format:	PDF
Word Count:	14000 words
Price(USD):	(USD)
Delivery:	via email in 1-3 business day

前言 Ⅲ
1 范围 1
2 规范性引用文件 1
3 术语和定义 1
4 检测方法概述 2
5 干扰因素 3
6 设备 4
7 试剂 5
8 取样及样片制备 5
9 测试步骤 7
10 报告 8
11 精密度和偏差 8
附录A (规范性附录) 注入水平的修正 9
附录B(资料性附录) 注入水平的相关探讨 10
附录C (资料性附录) 载流子复合寿命与温度的关系 13
附录D (资料性附录) 少数载流子复合寿命 16
附录E (资料性附录) 测试方法目的和精密度 19
参考文献 20