Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques

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GB/T 14142-1993 Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
Standard No.:	GB/T 14142-1993	Status:	ABOLISHED remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	3500 words	Price(USD):	105 (USD) remind me the price change Email:
Implemented on:	1993-10-01	Delivery:	via email in 1-3 business day
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Standard No.:	GB/T 14142-1993
Chinese Name:	硅外延层晶体完整性检验方法腐蚀法
English Name:	Test method for crystallographic perfection of epitaxial layers in silicon by etching techniques
Professional Classification:	H26 Metal nondestructive testing method
Professional Classification:	GB National Standard
Issued by:
Issued on:	1993-02-06
Implemented on:	1993-10-01
Status:	ABOLISHED
Replace By:	GB/T14142-2017 Test method for crystallographic perfection of epitaxial layers in silicon—Etching technique
Replace By Date:	2018-04-01
Language:	English
File Format:	PDF
Word Count:	3500 words
Price(USD):	105 (USD)
Delivery:	via email in 1-3 business day

GB/T 14142-1993 The following standards are cited：

GB/T 14142-1993 Cited by the following standards：

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