Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method

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GB/T 26068-2018 Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
Standard No.:	GB/T 26068-2018	Status:	VALID remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	16000 words	Price(USD):	(USD) remind me the price change Email:
Implemented on:	2019-11-01	Delivery:	via email in 1-5 business day
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Standard No.:	GB/T 26068-2018
Chinese Name:	硅片和硅锭载流子复合寿命的测试非接触微波反射光电导衰减法
English Name:	Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method
Professional Classification:	H21 Metal physical property test method
ICS Classification:	77.040
Issued by:
Issued on:	2018-12-28
Implemented on:	2019-11-01
Status:	VALID
Replace:	GB/T26068-2010 Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance
Language:	English
File Format:	PDF
Word Count:	16000 words
Price(USD):	(USD)
Delivery:	via email in 1-5 business day

GB/T 26068-2018 The following standards are cited：

GB/T 26068-2018 Cited by the following standards：

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