Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A

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GB/T 6590-1998 Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A
Standard No.:	GB/T 6590-1998	Status:	VALID remind me the status change Email:
Language:	English	File Format:	PDF
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Implemented on:	1999-06-01	Delivery:	via email in 1-3 business day
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Standard No.:	GB/T 6590-1998
Chinese Name:	半导体器件分立器件第6部分:闸流晶体管第二篇 100A以下环境或管壳额定的双向三极闸流晶体管空白详细规范
English Name:	Semiconductor devices -Discrete devices -Part 6:Thyristors- Section Two-Blank detail specification for bidirectional triode thyristors(triacs), ambient or case-rated,up to 100A
Professional Classification:	L43 Semiconductor rectifier devices
Professional Classification:	GB National Standard
ICS Classification:	31.080.20 Thyristors
Issued by:
Issued on:	1998-01-01
Implemented on:	1999-06-01
Status:	VALID
Language:	English
File Format:	PDF
Word Count:
Price(USD):	please email coc@codeofchina.com for quotation
Delivery:	via email in 1-3 business day

GB/T 6590-1998 The following standards are cited：

GB/T 6590-1998 Cited by the following standards：

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