Semiconductor discrete device-Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of Type 3DG210

SJ 20062-1992 Semiconductor discrete device-Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of Type 3DG210
Standard No.:	SJ 20062-1992	Status:	VALID remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	6000 words	Translation Price:	180 (USD) remind me the price change Email:
Implemented on:	1993-05-01	Delivery:	via email in 1-3 business day
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Standard No.:	SJ 20062-1992
Chinese Name:	半导体分立器件３ＤＧ２１０型ＮＰＮ硅超高频低噪声差分对晶体管详细规范
English Name:	Semiconductor discrete device-Detail specification for silicon NPN ultra-high frequency low-noise difference match transistor of Type 3DG210
Professional Classification:	B01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1992-11-19
Implemented on:	1993-05-01
Status:	VALID
Target Language:	English
File Format:	PDF
Word Count:	6000 words
Translation Price:	180 (USD)
Delivery:	via email in 1-3 business day

SJ 20062-1992 The following standards are cited：

SJ 20062-1992 Cited by the following standards：