Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440

Chinese Classification Professional Classification ICS Classification Latest News

SJ 20176-1992 Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440
Standard No.:	SJ 20176-1992	Status:	VALID remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	6000 words	Price(USD):	180 (USD) remind me the price change Email:
Implemented on:	1993-05-01	Delivery:	via email in 1-3 business day
Purchase steps: 1 - Add shopping cart → 2 - My shopping cart → 3 - Login → 4 - Invoice information → 5 - Checkout

Standard No.:	SJ 20176-1992
Chinese Name:	半导体分立器件３ＤＧ３４３９型和３ＤＧ３４４０型ＮＰＮ硅小功率高反压晶体管详细规范
English Name:	Semiconductor discrete device-Detail specification for NPN silicon low-power high-reverse-voltage transistor of Types 3DG3439 and 3DG3440
Professional Classification:	D01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1992-11-19
Implemented on:	1993-05-01
Status:	VALID
Language:	English
File Format:	PDF
Word Count:	6000 words
Price(USD):	180 (USD)
Delivery:	via email in 1-3 business day

SJ 20176-1992 The following standards are cited：

SJ 20176-1992 Cited by the following standards：

Tel：+86-10-8572 5655 Fax：+86-10-8581 9515 Email: coc@codeofchina.com QQ: 672269886