Detail specification for electronic components-Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871

SJ 3127-1988 Detail specification for electronic components-Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871
Standard No.:	SJ 3127-1988	Status:	remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	5500 words	Translation Price:	165 (USD) remind me the price change Email:
Implemented on:	1988-12-01	Delivery:	via email in 1-3 business day
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Standard No.:	SJ 3127-1988
Chinese Name:	电子器件详细规范３ＤＤ８７１型硅ＮＰＮ低频放大管壳额定双极型晶体管
English Name:	Detail specification for electronic components-Case-rated bipolar transistors for silicon NPN low frequency amplification,Type 3DD871
Professional Classification:	F01 Technical management
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1988-04-08
Implemented on:	1988-12-01
Status:
Target Language:	English
File Format:	PDF
Word Count:	5500 words
Translation Price:	165 (USD)
Delivery:	via email in 1-3 business day

SJ 3127-1988 The following standards are cited：

SJ 3127-1988 Cited by the following standards：