Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction

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SJ 3244.2-1989 Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
Standard No.:	SJ 3244.2-1989	Status:	remind me the status change Email:
Language:	English	File Format:	PDF
Word Count:	2500 words	Price(USD):	75 (USD) remind me the price change Email:
Implemented on:	1989-03-25	Delivery:	via email in 1-3 business day
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Standard No.:	SJ 3244.2-1989
Chinese Name:	砷化镓、磷化铟衬底与异质结外延层之间晶格失配的测量方法
English Name:	Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
Professional Classification:	A01 Technical Management
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1989-03-20
Implemented on:	1989-03-25
Status:
Language:	English
File Format:	PDF
Word Count:	2500 words
Price(USD):	75 (USD)
Delivery:	via email in 1-3 business day

SJ 3244.2-1989 The following standards are cited：

SJ 3244.2-1989 Cited by the following standards：

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