Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)

SJ/T 11055-1996 Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Standard No.:	SJ/T 11055-1996	Status:	remind me the status change Email:
Target Language:	English	File Format:	PDF
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Standard No.:	SJ/T 11055-1996
Chinese Name:
English Name:	Detailed specifications for electronic components - 4CS119 high frequency silicon dual insulated-gate field-effect transistors (Applicable for certification)
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:
Implemented on:
Status:
Target Language:	English
File Format:	PDF
Word Count:
Translation Price:	please email coc@codeofchina.com for quotation
Delivery:	via email in 1 business day

SJ/T 11055-1996 The following standards are cited：

SJ/T 11055-1996 Cited by the following standards：