| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 31854-2015 |
Test method for measuring metallic impurities content in silicon materials used for photovoltaic applications by inductively coupled plasma mass spectrometry |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 31475-2015 |
Requirements for solder paste for high-quality interconnections in electronics assembly |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 12964-2003 |
Monocrystalline silicon polished wafers |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 17170-1997 |
Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 11093-2007 |
Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 35305-2017 |
Monocrystalline gallium arsenide polished wafers for solar cell |
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 20230-2006 |
Indium phosphide single crystal |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 30656-2014 |
Polished monocrystalline silicon carbide wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 26067-2010 |
Standard test method for dimensions of notches on silicon wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1558-2009 |
Test method for substitutional atomic carbon concent of silicon by infrared absorption |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 12963-1996 |
Polycrystalline silicon |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 29504-2013 |
300 mm monocrystalline silicon |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14844-2018 |
Designations of semiconductor materials |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| YS/T 543-2006 |
Fine aluminum-1% silicon wire for semiconductor lend-bonding |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 14139-2019 |
Silicon epitaxial wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 16595-2019 |
Specification for a universal wafer grid |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 26071-2018 |
Monocrystalline silicon wafers for solar cells |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 12963-2009 |
Specification for polycrystalline silicon |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 29055-2012 |
Multi-crystalline silicon wafer for solar cell |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24575-2009 |
Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
