| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 29332-2012 |
Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 16468-1996 |
Series programmes for static induction transistors |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 6219-1998 |
Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB 9432-1988 |
Blank detail specification for industrial heating tetrode |
75 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 17008-1997 |
Terminology and letter symbols for insulated-gate bipolar transistor |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| SJ/T 11227-2000 |
Detail specification for electronic components Type 3DA98 NPN silicon high-frequency power transistor |
160 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 6218-1996 |
Blank detail specification for bipolar transistors for switching applications |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 7577-1996 |
Blank detail specification for case-rated bipolar transistors for low-frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 21039.1-2007 |
Semiconductor devices—Discrete devices—Part 4-1:microwave diodes and transistors—Microwave field effect transistors—Blank detail specification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB 12300-1990 |
Test methods of safe operating area for power transistors |
75 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 7576-1998 |
Semiconductor devices -Discrete devices -Part 7:Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor |
150 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 37660-2019 |
Technical specification of power electronic devices for high-voltage direct current(HVDC) transmission using voltage sourced converters(VSC) |
300 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 17007-1997 |
Measuring methods for insulated-gate bipolar transistor |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 6217-1998 |
Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
|
|
