| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| YS/T 448-2002 |
Copper and copper alloys inspection method of macrostructure for cast and wrought products |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| YS/T 438.3-2001 |
Methods for physical performance determination of sandy alumina—Determination of the angle of repose |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| YS/T 449-2002 |
Copper and copper alloys inspction method of microstructure for cast and wrought products |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 32282-2015 |
Test method for dislocation density of GaN single crystal—Cathodoluminescence spectroscopy |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 32188-2015 |
Test method for full width at half maximum of double crystal X-ray rocking curve of GaN single crystal substrate |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 26068-2018 |
Test method for carrier recombination lifetime in silicon wafers and silicon ingots—Non-contact measurement of photoconductivity decay by microwave reflectance method |
 (USD) |
via email in
1-5 business day
|
VALID
|
|
| GB/T 351-1995 |
Metallic materials—Resistivity measurement method |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| YS/T 23-2016 |
Test method for thickness of epitaxial layers—Stacking fault size |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 30860-2014 |
Test methods for surface roughness and saw mark of silicon wafers for solar cells |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1550-2018 |
Test methods for conductivity type of extrinsic semiconducting materials |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 34210-2017 |
Test method for determining the orientation of sapphire single crystal |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6396-1995 |
Clad plates－Mechanical and technological test |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB 6146-1985 |
Test method for resistivity of precision resistance alloys |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 32277-2015 |
Test method for instrumental neutron activation analysis (INAA) of silicon |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 19199-2015 |
Test methods for carbon acceptor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| JB/T 10062-1999 |
Testing methods for performance of probes used in ultrasonic flaw detection |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| YS/T 335-1994 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 17170-2015 |
Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 24-2016 |
Test methods for spike of epitaxial layers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 19921-2018 |
Test method for particles on polished silicon wafer surfaces |
 (USD) |
via email in
1-5 business day
|
VALID
|
|
|
|
