Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
SJ 1470-1979 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG102 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 20356-1993 |
Code for software quality assurance of airborne radar |
255 (USD) |
via email in
1-3 business day
|
VALID
|
|
GB 29144-2012 |
Minimum allowable values of energy efficiency and the energy efficiency grades for self-ballasted electrodeless fluorescent lamps with general lighting service |
100 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 1470-79 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG102 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 1481-1979 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG131 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
GB 20052-2013 |
Minimum allowable values of energy efficiency and energy efficiency grades for three-phase distribution transformers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 2354.13-1983 |
Method of measurement for multiplication factor of PIN and avalanche photodiodes |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
SJ 3123-1988 |
Detail specification for electronic components-Ambient-rated bipolar transistors for high frequency amplification,Type 3DG1779 |
135 (USD) |
via email in
1-3 business day
|
|
|
GB 33654-2017 |
The norm of energy consumption per unit products of alumina |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ/T 9560.14-1993 |
Dry reed-Quality grading standard |
15 (USD) |
via email in
1-3 business day
|
|
|
SJ 2700-1986 |
Detail specification for silicon NPN high frequency medium power transistors,Type 3DG2060 |
135 (USD) |
via email in
1-3 business day
|
|
|
SJ 2760-1987 |
Detail specification for plastic package high voltage silicon rectifier stacks,Type 2CZ70~77 and 2CL79 |
180 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
SJ 1784-1981 |
Detail specification for silicon single phase bridge rectifiers,Type QL1-9 and QL21-28 |
120 (USD) |
via email in
1-3 business day
|
|
|
SJ 775-74 |
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD65 and 3DD66 |
60 (USD) |
via email in
1-3 business day
|
|
|
SJ 2849-1988 |
Construction dimensions for package parts of discrete semiconductor devices |
1245 (USD) |
via email in
1-10 business day
|
|
|
SJ 1484-1979 |
Detail specification for silicon PNP epitaxial planar high frequency low power high reverse voltage transistors,Type 3CG160 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 20358-1993 |
General specification for analogue TV signal Fibre-optical communication equipment |
255 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 1789-1981 |
Method of measurement for maximum operational frequency of silicon single phase bridge rectifiers,up to 5A |
15 (USD) |
via email in
1-3 business day
|
|
|
SJ 781-1974 |
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD73 |
224 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 789-74 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG120 |
120 (USD) |
via email in
1 business day
|
VALID
|
|
|