| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 23331-2009 |
Management system for energy - Requirements |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 17167-1997 |
Guides for providing and managing of the measuring instruments of energy in enterprise |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 33873-2017 |
Testing method of energy efficiency for hot aging test oven |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 1474-1979 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 11175-1998 |
Equipments and components used in cabled distribution systems primarily intended for television and sound signals Generic specification for two-way trunk amplifiers |
300 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 124.2-2010 |
Methods of determination and calculation of heat balance in metallurgical furnaces for production of carbon products—Part 2:Pot-type calciner |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 1409-1978 |
Detail specification for silicon NPN high-frequency high pwer transistors,Type 3DA3 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 30260-2013 |
Guides for energy and resource management performance evaluation of public institutions |
300 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 934-75 |
Detail specification for silicon NPN low frequency high power high reversse voltage transistors,Type 3DD100 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1413-78 |
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA2 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1474-79 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1423-78 |
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA32 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 10414-1993 |
Solder for semicoductor device |
224 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 1476-79 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG114 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1406-1978 |
Detail specification for silicon NPN high-frequency high power transistors,Type 3DA96 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2759-1987 |
Detail specification for glass passivation package high voltage silicon rectifier stacks,Type 2CZ21~29 |
195 (USD) |
via email in
1-3 business day
|
|
|
| SJ 787-74 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors,Type 3DG111 |
120 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 15320-2001 |
Evaluation guides of the energy conservation products |
90 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2141-1982 |
Methods of measurement for breakdown voltage of silicon currenet regulator diodes |
15 (USD) |
via email in
1-3 business day
|
|
|
| SJ 770-74 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors,Type 3DD58 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
|
|
