| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 24577-2009 |
Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6621-2009 |
Testing methods for surface flatness of silicon slices |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 4058-2009 |
Test method for detection of oxidation induced defects in polished silicon wafers |
300 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 29505-2013 |
Test method for measuring surface roughness on planar surfaces of silicon wafer |
480 (USD) |
via email in
1-5 business day
|
VALID
|
|
| GB/T 26068-2010 |
Test method for carrier recombination lifetime in silicon wafers by non-contact measurement of photoconductivity decay by microwave reflectance |
420 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 25075-2010 |
Gallium arsenide single crystal for solar cell |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1558-2009 |
Test method for substitutional atomic carbon concent of silicon by infrared absorption |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14844-2018 |
Designations of semiconductor materials |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 16595-2019 |
Specification for a universal wafer grid |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24575-2009 |
Test method for measuring surface sodium,aluminum,potassium,and iron on silicon and epi substrates by secondary ion mass spectrometry |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14847-2010 |
Test method for thickness of lightly doped silicon epitaxial layers on heavily doped silicon substrates by infrared reflectance |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6619-2009 |
Test methods for bow of silicon wafers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 838-2012 |
Cadmium telluride |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24574-2009 |
Test methods for photoluminescence analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 679-2008 |
Test methods for minority carrier diffusion length in extrinsic semiconductors by measurement of steady-steady-state surface photovoltage |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 30453-2013 |
Metallographs collection for original defects of crystalline silicon |
1320 (USD) |
via email in
1-10 business day
|
VALID
|
|
| GB/T 6617-2009 |
Test method for measuring resistivity of silicon wafer using spreading resistance probe |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1555-2009 |
Testing methods for determining the orientation of a semiconductor single crystal |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14141-2009 |
Test method for sheet resistance of silicon epitaxial,diffused and ion-implanted layers using a collinear four-probe array |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 13388-2009 |
Method for measuring crystallographic orientation of flats on single-crystal silicon slices and wafers by X-ray techniques |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
