| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 14144-2009 |
Testing method for determination of radial interstitial oxygen variation in silicon |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24582-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-inductively coupled plasma mass spectrometry |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6618-2009 |
Test method for thickness and total thickness variation of silicon slices |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 29057-2012 |
Practice for evaluation of polocrystalline silicon rods by float-zone crystal growth and spectroscopy |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 32279-2015 |
Specification for order entry format of silicon wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 34479-2017 |
Specification for alphanumeric marking of silicon wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6624-2009 |
Standard method for measuring the surface quality of polished silicon slices by visual inspection |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 26065-2010 |
Specification for polished test silicon wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 13387-2009 |
Test method for measuring flat length wafers of silicon and other electronic materials |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14264-1993 |
Semiconductor materials－Terms and definitions |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 24579-2009 |
Test method for measuring surface metal contamination of polycrystalline silicon by acid extraction-atomic absorption spectroscopy |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 4061-2009 |
Polycrystalline silicon-examination method-assessment of sandwiches on cross-section by chemical corrosion |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 37051-2018 |
Test method for determination of crystal defect density in PV silicon ingot and wafer |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 26066-2010 |
Practice for shallow etch pit detection on silicon |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 24-1992 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24581-2009 |
Test method for low temperature FT-IR analysis of single crystal silicon for Ⅲ-Ⅴ impurities |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14264-2009 |
Semiconductor materials—Terms and definitions |
 (USD) |
via email in
1-8 business day
|
VALID
|
|
| GB/T 30110-2013 |
Measuring methods of parameters of HgCdTe epilayers used for space infrared detectors |
 (USD) |
via email in
1-5 business day
|
VALID
|
|
| GB/T 26071-2010 |
Mono-crystalline silicon as cut slices for photovoltaic solar cells |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 8756-2018 |
Collection of metallographs on defects of germanium crystal |
 (USD) |
via email in
1-5 business day
|
VALID
|
|
|
|
