| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 2355.2-1983 |
Method of measurement for forward voltage drop of light-emitting devices |
180 (USD) |
via email in
1 business day
|
|
|
| SJ/T 11196-1998 |
Specification for super VCD system |
1215 (USD) |
via email in
1-10 business day
|
VALID
|
|
| SJ 20682-1998 |
General specification for Lx band Solid-state pulse power modules |
285 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2365-1983 |
Detail specification for silicon PNP low frequency low voltage high power transistors, Type 3CD167 and 3CD367 |
180 (USD) |
via email in
1 business day
|
|
|
| SJ 45-65 |
Type designation system for radio-frequency cables |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 10848-1996 |
Detail specification for electronic components-Semiconductor integrated circuits-ECL Dual 2-wide 2-3 input OR-AND/OR-AND INVERT gates for Type CE10117 (Applicable for certificati |
225 (USD) |
via email in
1-3 business day
|
|
|
| SJ/T 10153-1991 |
Detail specification for electronic components-Hybrid thick-film integrated circuits,video output circuits,Type HM0004 and HM0190 |
150 (USD) |
via email in
1-3 business day
|
|
|
| SJ 3038.1-1988 |
Combined dies-Movable locating compounds |
30 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 31452-1994 |
|
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 2541-1984 |
Specification for meteorogical facsimiles (analog) |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/108-1996 |
Semiconductor discrete device-Detail specification for Gunn diodes for Type 2EY5671,2EY5672 |
105 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 20520-1995 |
Specification for Cadmium-Zine Telluride Slice for Mercury-Cadmium Telluride film |
160 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 9571.1-1995 |
Quality grading standard for low-frequency piezoelectric ceramic resonators |
180 (USD) |
via email in
1 business day
|
|
|
| SJ 50033/101-1995 |
Detail specification for semiconductor laser diode modules for Type GJ1325 |
195 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/Z 9145-1987 |
Methods of characteristics of electro-mechanical transducers for determing shock and vibration measurements |
180 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/163-2003 |
Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors |
195 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 1474-1979 |
Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG112 |
184 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 11175-1998 |
Equipments and components used in cabled distribution systems primarily intended for television and sound signals Generic specification for two-way trunk amplifiers |
300 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 3241-1989 |
Gallium arsenide single-crystal bar and wafer |
195 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/154-2002 |
Semiconductor discrete devices Detail specification for type 3DG251 silicon UHF low-noise transistor |
135 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
