| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 1873-1981 |
Methods of measurement for optimum working current of gas laser devices |
164 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 11514-2015 |
|
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| SJ/Z 1465-1979 |
Method of chemical analysis of ceramic blank |
660 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 11024-1996 |
Methods of analysis for silver-copper brazing for electronic devices-Determination of antimony (spectrophotometric-atomic absorption method) |
95 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 10227-1991 |
Methods of determination for viscosity of potassium silicate solution for use in electronic industry |
95 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1056-1976 |
Pulsed magnetrons,Type CKM-99 |
240 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 20477/2-1997 |
Detail specification for Type DP-10 512512 line a.c. plasma diaplay device |
150 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1228-77 |
Detail specification for germanium wideband detector diodes,Type 2AP30~2AP31 |
90 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 434-1973 |
Method of measurement for power-voltage characteristics of O-type backward-wave tubes |
|
via email in
|
|
please email coc@codeofchina.com for quotation
|
| SJ/T 11060-1996 |
Detail specification for electronic components-Bipolar transistor for ambient-rated high-frequency amplification,Type 3DG3130 (Applicable for certification) |
165 (USD) |
via email in
1-3 business day
|
|
|
| SJ/T 11140-1997 |
Electrode foil for aluminum electrolytic capacitor |
300 (USD) |
via email in
1 business day
|
SUPERSEDED
|
|
| SJ/T 11397-2009 |
Phosphors for light emitting diodes |
285 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 50033/158-2002 |
Semiconductor discrete devices Detail specification for type 3DG44 silicon UHF low-noise transistor |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/Z 9073.3-1987 |
Electrical relays-Part 15: Enderance tests for electrical relay contacts-Specification for the characterics of test equipment |
60 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ/T 10952-1996 |
Detailed specifications for electronic components - 2CZ323 ambient-rated silicon rectifier diodes (Applicable for certification) |
300 (USD) |
via email in
1 business day
|
|
|
| SJ/T 31397-1994 |
|
30 (USD) |
via email in
1-3 business day
|
|
|
| SJ 773-1974 |
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors,Type 3DD62 and 3DD63 |
60 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2275-1983 |
Detail specification for silicon NPN epitaxial planar superhigh frequency low power transistors, Type 3DG85 |
180 (USD) |
via email in
1 business day
|
|
|
| SJ/T 11031-1996 |
Methods of analysis for gold-copper and gold-nickel brazing for elelctronic devices - Determination of phophorus (spectrophotometric method) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/Z 9141.3-1987 |
Audio,video,television equipment and systems-Part 4: Preferred matching values for the interconnection of equipment in a system |
105 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
|
|
