STANDARD test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes

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GB/T 14863-1993 STANDARD test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Standard No.:	GB/T 14863-1993	Status:	ABOLISHED remind me the status change Email:
Language:	English	File Format:	PDF
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Implemented on:	1994-10-01	Delivery:	via email in 1-3 business day
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Standard No.:	GB/T 14863-1993
Chinese Name:	用栅控和非栅控二极管的电压-电容关系测定硅外延层中净载流子浓度的标准方法
English Name:	STANDARD test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Professional Classification:	L41 Semiconductor diode
Professional Classification:	GB National Standard
Issued by:
Issued on:	1993-01-02
Implemented on:	1994-10-01
Status:	ABOLISHED
Replace By:	GB/T14863-2013 Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Replace By Date:	2014-08-15
Language:	English
File Format:	PDF
Word Count:
Price(USD):	please email coc@codeofchina.com for quotation
Delivery:	via email in 1-3 business day

GB/T 14863-1993 The following standards are cited：

GB/T 14863-1993 Cited by the following standards：

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