Standard No.:	GB/T 14863-2013
Chinese Name:	用栅控和非栅控二极管的电压电容关系测定硅外延层中净载流子浓度的方法
English Name:	Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Professional Classification:	H80 Semimetal and semiconductor material in general
Professional Classification:	GB National Standard
ICS Classification:	29.045 Semiconducting materials
Issued by:
Issued on:	2013-12-31
Implemented on:	2014-08-15
Status:
Replace:	GB/T14863-1993 STANDARD test method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes
Language:	English
File Format:	PDF
Word Count:	8000 words
Price(USD):	240 (USD)
Delivery:	via email in 1-3 business day

下列文件对于本文件的应用是必不可少的。凡是注日期的引用文件,仅注日期的版本适用于本文件。凡是不注日期的引用文件,其最新版本(包括所有的修改单)适用于本文件。
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