Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG160

SJ 796-1974 Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG160
Standard No.:	SJ 796-1974	Status:	remind me the status change Email:
Target Language:	English	File Format:	PDF
Word Count:	4000 words	Translation Price:	120 (USD) remind me the price change Email:
Implemented on:	1974-10-01	Delivery:	via email in 1-3 business day
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Standard No.:	SJ 796-1974
Chinese Name:	3DG160型NPN硅平面高频小功率高反压三极管
English Name:	Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG160
Professional Classification:	L42 Semiconductor triode
Professional Classification:	SJ Professional Standard - Electronics
Issued by:
Issued on:	1974-10-01
Implemented on:	1974-10-01
Status:
Target Language:	English
File Format:	PDF
Word Count:	4000 words
Translation Price:	120 (USD)
Delivery:	via email in 1-3 business day

SJ 796-1974 The following standards are cited：

SJ 796-1974 Cited by the following standards：