| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB 9522-1988 |
|
210 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 9500-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 29332-2012 |
Semiconductor devices—Discrete devices—Part 9:Insulated-gate bipolar transistors (IGBT) |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| SJ 772-1974 |
Detail specification for silion NPN alloy diffused low-frequency high power transistors Type 3DD61 |
60 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/176-2007 |
|
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
| SJ 50033/166-2004 |
Semiconductor discrete devices Detail specification for type 3DA507 silicon microwave pulse power transistor |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 6354-1986 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 9518-1988 |
|
135 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 4586-1994 |
Semiconductor devices－Discrete devices－Part 8: Field-effect transistors |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB 9508-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| ZB/Z Y 349-1985 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| SJ 797-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG161 |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 6219-1998 |
Semiconductor devices- Discrete devices- Part 8:Field-effect transistors -Section One-Blank detail specification for single-gate field-effect transistors up to 5W and 1GHz |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB 10272-1988 |
|
165 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 801-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG181 |
120 (USD) |
via email in
1-3 business day
|
|
|
| GB 9511-1988 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ/T 11225-2000 |
Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB 7577-1987 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 799-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power reverse voltage transistors Type 3DG170 |
120 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/169-2004 |
Semiconductor discrete devices Detail specification for type 3DA510 silicon microwave pulse power transistor |
150 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
