| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 776-1974 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors Type 3DD67 |
60 (USD) |
via email in
1-3 business day
|
|
|
| GB 9509-1988 |
Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification |
160 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 4587-1984 |
|
810 (USD) |
via email in
1-8 business day
|
ABOLISHED
|
|
| SJ 774-1974 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors Type 3DD64 |
60 (USD) |
via email in
1-3 business day
|
|
|
| SJ 795-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors Type 3DG142 |
120 (USD) |
via email in
1-3 business day
|
|
|
| GB 9510-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 10273-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 7579-1987 |
Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2143-1982 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| SJ 790-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors Type 3DG121 |
120 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/167-2004 |
Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 7149-1987 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 9521-1988 |
|
160 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 9517-1988 |
|
165 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 50033/163-2003 |
Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors |
195 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor |
150 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 9507-1988 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 796-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG160 |
120 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/168-2004 |
Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor |
150 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB 7147-1987 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
|
|
