| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 768-1974 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors Type 3DD55 |
60 (USD) |
via email in
1-3 business day
|
|
|
| GB 9516-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 779-1974 |
Detail specification for silicon NPN epitaxial planar low-frequency high power transistors Type 3DD71 |
60 (USD) |
via email in
1-3 business day
|
|
|
| GB/T 7577-1996 |
Blank detail specification for case-rated bipolar transistors for low-frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB 9519-1988 |
|
135 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 791-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors Type 3DG122 |
120 (USD) |
via email in
1-3 business day
|
|
|
| SJ 789-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors Type 3DG120 |
120 (USD) |
via email in
1-3 business day
|
|
|
| GB 9515-1988 |
Detail specification for electronic components low-frequency amplification transistor for silicon NPN case-rated for type 3DD205A |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 6357-1986 |
|
195 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 776-1974 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors Type 3DD67 |
60 (USD) |
via email in
1-3 business day
|
|
|
| GB 9509-1988 |
Detail specification for electronic components--Ambient-rated transistor for type 3CG778 silicon PNP for high frequency amplification |
160 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 4587-1984 |
|
810 (USD) |
via email in
1-8 business day
|
ABOLISHED
|
|
| SJ 774-1974 |
Detail specification for silicon NPN alloy diffused low-frequency high power transistors Type 3DD64 |
60 (USD) |
via email in
1-3 business day
|
|
|
| SJ 795-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power low noise transistors Type 3DG142 |
120 (USD) |
via email in
1-3 business day
|
|
|
| GB 9510-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 10273-1988 |
|
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 7576-1998 |
Semiconductor devices -Discrete devices -Part 7:Bipolar transistors -Section Four-Blank detail specification for case-rated bipolar transistors for high-frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB 7579-1987 |
Detail specification for electronic component--Case-rated bipolar transistor for type 3DD201 for low-frequency amplification |
130 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2143-1982 |
|
|
via email in
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| SJ 790-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power transistors Type 3DG121 |
120 (USD) |
via email in
1-3 business day
|
|
|
|
|
