| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| GB/T 30854-2014 |
Gallium nitride based epitaxial layer for LED lighting |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 31092-2014 |
Monocrystalline sapphire ingot |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 11093-2007 |
Liquid encapsulated czochralski-grown gallium arsenide single crystals and as-cut slices |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 35305-2017 |
Monocrystalline gallium arsenide polished wafers for solar cell |
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 20230-2006 |
Indium phosphide single crystal |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 30656-2014 |
Polished monocrystalline silicon carbide wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 11396-2009 |
The sapphire substrates for nitride based light-emitting diode |
 (USD) |
via email in
1-3 business day
|
|
|
| GB/T 30867-2014 |
Test method for measuring thickness and total thickness variation of monocrystalline silicon carbide wafers |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 792-2012 |
Carbon-carbon composites crucible used in single crystal furnace |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 11094-2007 |
Horizontal bridgman grown gallium arsenide single crystal and cutting wafer |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 988-2014 |
Carboxyethyl-germanium sesquioxide |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YS/T 13-2015 |
|
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 11072-2009 |
Indium antimonide polycrystal,single crystals and as-cut slices |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YS/T 978-2014 |
Carbon/carbon composites guide shield of single crystal furnace |
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB/T 35308-2017 |
Epitaxial wafers of germanium based Ⅲ-Ⅴcompounds for solar cell |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 30856-2014 |
GaAs substrates for LED epitaxial chips |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 20229-2006 |
Gallium phosphide single crystal |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
| GB/T 36706-2018 |
Polycrystalline indium phosphide |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 30868-2014 |
Test method for measuring micropipe density of monocrystalline silicon carbide wafers—Chemically etching |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 30855-2014 |
GaP substrates for LED epitaxial chips |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
