Standard No.:	GB/T 6616-2009
Chinese Name:	半导体硅片电阻率及硅薄膜薄层电阻测试方法 非接触涡流法
English Name:	Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge
Professional Classification:	H80 Semimetal and semiconductor material in general
Professional Classification:	GB National Standard
ICS Classification:	29.045 Semiconducting materials
Issued by:
Issued on:	2009-10-30
Implemented on:	2010-06-01
Status:	VALID
Replace:	GB/T6616-1995 Test method for measuring resistivity of semiconductor silicon or sheet resistance of semiconductor films with a noncontact eddy-current gage
Language:	English
File Format:	PDF
Word Count:	6000 words
Price(USD):	180 (USD)
Delivery:	via email in 1-3 business day

下列文件中的条款通过本标准的引用而成为本标准的条款。凡是注日期的引用文件,其随后所有的修改单(不包括勘误的内容)或修订版均不适用于本标准,然而,鼓励根据本标准达成协议的各方研究是否可使用这些文件的最新版本。凡是不注日期的引用文件,其最新版本适用于本标准。
GB/T1552 硅、锗单晶电阻率测定 直排四探针法
ASTM E691 引导多个实验室测定试验方法的惯例