| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 50033/167-2004 |
Semiconductor discrete devices Detail specification for type 3DA508 silicon microwave pulse power transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 7149-1987 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB 9521-1988 |
|
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 9517-1988 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 50033/163-2003 |
Semiconductor discrete device Detail specification of type 3DK457 for power switching transistors |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 11226-2000 |
Detail specification for electronic components Type 3DA505 L band silicon pulse power transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| GB 9507-1988 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 796-1974 |
Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors Type 3DG160 |
 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/168-2004 |
Semiconductor discrete devices Detail specification for type 3DA509 silicon microwave pulse power transistor |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB 7147-1987 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 6217-1998 |
Semiconductor devices- Discrete devices -Part 7:Bipolar transistors-Section One-Blank detail specification for ambient-rated bipolar transistors for low and high frequency amplification |
|
via email in
1-3 business day
|
VALID
|
please email coc@codeofchina.com for quotation
|
|
|
