| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 3177-1988 |
Direct heated step-function positive temperature coefficient demagnetizing thermistors for Type MZ72 Assessment level E |
 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/80-1995 |
Semiconductor discrete devices-Detail specification for Type CS0513 GaAs microwave power FET |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 638.5-1993 |
|
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 10432-1993 |
Resistance type humidity sensors for use in electronic equipment-Part 1:General specification |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2309-1983 |
General specification for suppressed noise zinc oxide varistors |
 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/74-1995 |
Semiconductor discrete devices-Detail specification for Type 3DA325 silicon microwave power transistor |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 10349-1993 |
Detail specification for zinc oxide varistors for over-voltage protection for Type MYG3 |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 50033/69-1995 |
Semiconductor discrete device-Detail specification for Type PIN30 series for PIN diode |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YD/T 638.9-1993 |
|
 (USD) |
via email in
1 business day
|
SUPERSEDED
|
|
| SJ 50033/98-1995 |
Semiconductor discrete devices-Detail specification for Type 2CJ4211 and 2CJ4212 step recovery diodes |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 50033/85-1995 |
Semiconductor discrete devices - Detail specification for Type CS141 silicon N-channel MOS deplition mode field-effect transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/91-1995 |
Semiconductor discrete devices-Detail specification for Type 3CD030 low-frequency and high-power transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/81-1995 |
Semiconductor discrete devices-Detail specification for Type CS0524 GaAs microwave power FET |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 638.1-1993 |
|
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 50033/82-1995 |
Semiconductor discrete devices - Detail specification for Type 3DK100 NPN silicon low-power switching transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 638.4-1993 |
|
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ/T 2307.1-1997 |
Detail specification for electronic components - Surge suppression varistors - Type MYL1 zinc oxide varistors for use in lightning arrester - Assessment level E |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/61-1995 |
Semiconductor discrete device-Detail specification for Type 3DK6547 high-voltage and power switching transistor |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 1560-1980 |
Negative temperature coefficient thermistors used as voltage regulators for Type MF21 and MF22 |
 (USD) |
via email in
1-3 business day
|
|
|
| YD/T 1827-2008 |
Network Incident Object Description Exchange Format |
|
via email in
|
VALID
|
please email coc@codeofchina.com for quotation
|
|
|
