Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
SJ 2030-1982 |
Enveloped cadmium sulfide photoresistors for Type MG41 |
45 (USD) |
via email in
1-3 business day
|
|
|
SJ 1559-1980 |
Generic specification for negative temperature coefficient thermistors used as voltage regulators |
90 (USD) |
via email in
1-3 business day
|
|
|
SJ 50033/87-1995 |
Semiconductor discrete devices-Detail specification for Type CS4091~CS4093 silicon N-channel deplition mode field-effect transistor |
160 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 50033/97-1995 |
Semiconductor discrete devices-Detail specification for Type 2CJ4011,2CJ4012,2CJ4021 and 2CJ4022 step recovery diodes |
105 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 50033/67-1995 |
Semiconductor discrete device-Detail specification for Type 3DD103 high-voltage,low-frequency and high-power transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 2215.8-1982 |
Method of measurement for output saturation voltage of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
SJ 50033/84-1995 |
Semiconductor discrete devices - Detail specification for Type CS140 silicon N-channel MOS deplition mode field-effect transistor |
150 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 2217-1982 |
Silicon phototransistors |
30 (USD) |
via email in
1 business day
|
SUPERSEDED
|
|
SJ 50033/59-1995 |
Semiconductor discrete device-Detail specification for Type 3DK39 power switching transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 50033/64-1995 |
Semiconductor discrete device-Detail specification for Type 3CD010 low-frequency and high-power transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
YD/T 167-1994 |
|
1440 (USD) |
via email in
1-10 business day
|
VALID
|
|
YD XXX 4-1997 |
|
675 (USD) |
via email in
1-5 business day
|
VALID
|
|
SJ/T 11167-1998 |
Type designation system for sensing elements and sensing devices and transducers/sensors |
210 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 50033/96-1995 |
Semiconductor discrete devices-Detail specification for Type 3DG216 NPN silicon low-power difference matched-pair transistor |
150 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 2028.2-1983 |
Positive temperature coefficient thermistors used for temperature control for Type MZ61 |
120 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 50033/75-1995 |
Semiconductor discrete devices-Detail specification for Type 3DG135 silicon ultra high frequency low-power transistor |
150 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ 50033/71-1995 |
Semiconductor discrete device-Detail specification for Type PIN342 series for PIN diode |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
SJ/Z 9011.3-1987 |
Measurement of photosensitive devices - Part 3: Methods of measurement for photoconductive cells for use in the visible spectrum |
85 (USD) |
via email in
1 business day
|
VALID
|
|
SJ 50033.51-1994 |
Semiconductor discreted devices-Detail specification for type CS0558 GaAs microwave dual gate FET |
195 (USD) |
via email in
1-3 business day
|
VALID
|
|
YD/T 638.14-1993 |
|
30 (USD) |
via email in
1-3 business day
|
VALID
|
|
|