| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 50033/99-1995 |
Semiconductor optoelectronic devices-Detail specification for o/G double colour light emitting diode for Type GF511 |
150 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2214.4-1982 |
Method of measurement for reverse break-down voltage of semiconductor photodiodes |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/88-1995 |
Semiconductor discrete devices-Detail specification for Type CS6760 and CS6762 silicon N-channel enhacement mode field-effect transistor |
220 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/60-1995 |
Semiconductor discrete device-Detail specification for Type 3DK40 power switching transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2028-1982 |
Generic specification for directly heated positive temperature coefficient thermistors |
180 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 638.13-1993 |
|
45 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ/T 10431-1993 |
Humidity generators and humidity testing methods for the humidity sensors |
390 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/66-1995 |
Semiconductor discrete device-Detail specification for Type 3DD880 low-frequency and high-power transistor |
150 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2214.1-1982 |
General procedures of measurement for semiconductor photodiodes and phototransistors |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/T 10799-1996 |
Detail specification for electronic components-Directly heated negative temperature coefficient thermistor for Type MF53-1 Assessment level E (Applicable for certification) |
15 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 2215.5-1982 |
Method of measurement for reverse breakdown voltage of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033.56-1994 |
Semiconductor discrete device-Detail specification for type 2CK85 silicon switching diode |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2215.12-1982 |
Method of measurement for input-to-output capacitance of semiconductor photocouplers |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/T 10435-1993 |
General specification for the semiconductor resistance strain gage |
255 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 50033.52-1994 |
Semiconductor discrete device-Detail specification for type CS0529 GaAs microwave power field effect transistor |
180 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2214.9-1982 |
Method of measurement for pulse rise and fall time of semiconductor photodiodes and phototransistors |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/95-1995 |
Semiconductor discrete devices-Detail specification for Type 3DG144 NPN silicon high-frequency low-noise low-power transistor |
180 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2215.4-1982 |
Method of measurement for reverse current of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/100-1995 |
Semiconductor discrete devices-Detail specification for Type 2CJ60 step recovery diodes |
100 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/63-1995 |
Semiconductor discrete device-Detail specification for Type 3CD020 low-frequency and high-power transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
