| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ 50033/90-1995 |
Semiconductor discrete devices - Detail specification for Type 3DK106 NPN silicon low-power switching transistor |
150 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2031-1982 |
Enveloped cadmium sulfide photoresistors for Type MG42 |
45 (USD) |
via email in
1-3 business day
|
|
|
| SJ/T 10348-1993 |
Detail specification for zinc oxide varistors for over-voltage protection for Type MYG2 |
225 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2215.6-1982 |
Method of measurement for junction capacitance of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/T 11048-1996 |
Detail specification for electronic components-Varistors for surge suppression-Type MYG1 varistors for over-voltage protection Assessment level E (Applicable for certification) |
180 (USD) |
via email in
1-3 business day
|
|
|
| SJ 50033/70-1995 |
Semiconductor discrete device-Detail specification for Type PIN35 series for PIN diode |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2215.11-1982 |
Method of measurement for pulse rise fall delay and storage time of semiconductor photocouplers |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| YD/T 638.6-1993 |
|
45 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2214.6-1982 |
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor phototransistors |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/T 10554-1994 |
Letter symbols for sensor |
270 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2309.1-1983 |
Suppressed noise zinc oxide varistors for Type MYZ1 |
60 (USD) |
via email in
1-3 business day
|
|
|
| SJ 1553-1980 |
General specification for negative temperature coefficient thermistors for temperature measurement |
544 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 50033/68-1995 |
Semiconductors discrete device-Detail specification for Type BT51 NPN-silicon small power difference matched-pair transistor |
165 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2215.2-1982 |
Method of measurement for forward voltage of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ/Z 9011.4-1987 |
Measurement of photosensitive devices-Part 4: Methods of measurement for photomultipliers |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 1558-1980 |
Indirectly heated negative temperature coefficient thermistors for Type MF41 and MF44 |
45 (USD) |
via email in
1-3 business day
|
|
|
| SJ 2215.1-1982 |
General procedures of measurement for semiconductor photocouplers |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 2215.3-1982 |
Method of measurement for forward current of semiconductor photocouplers (diodes) |
184 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/83-1995 |
Semiconductor discrete devices-Detail specification for Type CS139 silicon P-channel MOS enhancement mode field-effect transistor |
180 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 10798-1996 |
Detail specification for electronic components-Directly heated negative temperature coefficient thermistor for Type MF11 Assessment level E (Applicable for certification) |
150 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
|
|
