| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| YS/T 985-2014 |
Polished reclaimed silicon wafers |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 24580-2009 |
Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14139-2009 |
Silicon epitaxial wafers |
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| YS/T 23-1992 |
|
45 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24578-2009 |
Test method for measuring surface metal contamination on silicon wafers by total reflection X-ray fluorescence spectroscopy |
240 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 24576-2009 |
Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14863-2013 |
Method for net carrier density in silicon epitaxial layers by voltage-capacitance of gated and ungated diodes |
240 (USD) |
via email in
1-3 business day
|
|
|
| GB/T 25076-2010 |
Monocrystalline silicon of solar cell |
180 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| GB/T 16596-2019 |
Specification for establishing a wafer coordinate system |
120 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14146-2009 |
Silicon epitaxial layers-determination of carrier concentration-mercury probe voltages-capacitance method |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 26069-2010 |
Specification for silicon annealed wafers |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1551-2009 |
Test method for measuring resistivity of monocrystal silicon |
360 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 14844-1993 |
Designations of semiconductor materials |
|
via email in
1-3 business day
|
ABOLISHED
|
please email coc@codeofchina.com for quotation
|
| GB/T 6616-2009 |
Test methods for measuring resistivity of semiconductor wafers or sheet resistance of semiconductor films with a noncontact eddy-current gauge |
180 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1553-2009 |
Test methods for minority carrier lifetime in bulk germanium and silicon by measurement of photoconduetivity decay |
240 (USD) |
via email in
1-3 business day
|
VALID
|
|
| GB/T 1554-2009 |
Testing method for crystallographic perfection of silicon by preferential etch techniques |
360 (USD) |
via email in
1-3 business day
|
VALID
|
|
|
|
