| Standard No. |
Title |
Price(USD) |
Delivery |
Status |
Add To Cart |
| SJ/T 10430-1993 |
Blank detail specification for the plenoresistive pressure transducer Assessment level E |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 1557-1980 |
General specification for indirectly heated temperature coefficient themistors |
 (USD) |
via email in
1-3 business day
|
ABOLISHED
|
|
| SJ 50033/92-1995 |
Semiconductor discrete devices-Detail specification for Type 3CD100 low-frequency and high-power transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 1826-2008 |
Network Security Emergency Handling Team Construct Guidelines |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| YD/T 638.12-1993 |
Type designation for communications measuring instruments |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/78-1995 |
Semiconductor discrete devices-Detail specification for Type CS0464 GaAs microwave FET |
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2214.5-1982 |
Method of measurement for junction capacitance of semiconductor photodiodes |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033.53-1994 |
Semiconductor discrete device - Detail specification for type CS0530 and CS0531 GaAs microwave power field effect transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 931-1997 |
|
 (USD) |
via email in
1-3 business day
|
|
|
| YD/T 932-1997 |
|
 (USD) |
via email in
1-3 business day
|
|
|
| SJ 2214.3-1982 |
Method of measurement for dark current of semiconductor photodiodes |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/93-1995 |
Semiconductor discrete devices - Detail specification for Type 3DG142 NPN silicon high-frequency low-noise low-power transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| YD/T 638.10-1993 |
|
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2214.7-1982 |
Method of measurement for saturation voltage of semiconductor phototransistors |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 50033/89-1995 |
Semiconductor discrete devices-Detail specification for Type CS6768 and CS6770 silicon N-channel enhancement mode field effect transistor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ/T 10555-1994 |
Graphical symbols for electrical diagrams sensor |
 (USD) |
via email in
1 business day
|
VALID
|
|
| SJ 2215.7-1982 |
Method of measurement for collector-emitter reverse breakdown voltage of semiconductor photocouplers (diodes) |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| SJ 2214.10-1982 |
Method of measurement for light current of semiconductor photodiodes and phototransistors |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
| YD/T 756-1995 |
|
 (USD) |
via email in
1-3 business day
|
VALID
|
|
| SJ 2215.9-1982 |
Method of measurement for reverse cut-off current of semiconductor photocouplers transistors |
 (USD) |
via email in
1 business day
|
ABOLISHED
|
|
|
|
